View APT30GT60BRDL_4692085.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TYPICAL PERFORMANCE CURVES
APT30GT60BRDL(G) 600V
APT30GT60BRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode Combi IGBT(R)
The Thunderbolt IGBT(R) used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating * Welding * Medical * High Power Telecom * Resonant Mode Phase Shifted Bridge
G E G
TO -24 7
C
E
C
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30GT60BRDL(G) UNIT Volts
600 30 64 30 110 110A @ 600V 250 -55 to 150 300
C Watts Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX Units
600 3 1.6 4 2.0 2.8 50
2
5 2.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C)
I CES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
11-2008 052-6360 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1250 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GT60BRDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150C, R G = 10, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 30A
4 5
MIN
TYP
MAX
UNIT
1600 155 90 7.5 145 10 60 110 12 20 225 80 525 605 600 12 20 245 100 570 965 830 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 10 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 30A RG = 10
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.50 1.0 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
11-2008 Rev B
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
052-6360
TYPICAL PERFORMANCE CURVES
100
V
GE
APT30GT60BRDL(G)
140 15 &13V IC, COLLECTOR CURRENT (A) 120 11V 100 10V 80 60 40 20 0 9V 8V 7V 6V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
= 15V
90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0
TJ = -55C
TJ = 25C
TJ = 125C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
FIGURE 1, Output Characteristics(TJ = 25C) 100 90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = 25C VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16
I = 30A C T = 25C
J
TJ = -55C
14 12 10 8 6 4 2 0 0
VCE = 120V VCE = 300V
VCE = 480V
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
20
40
60 80 100 120 140 160 GATE CHARGE (nC)
FIGURE 4, Gate Charge 3.5 3.0 2.5 IC = 30A 2.0 1.5 1.0 0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15 0 6 IC = 15A IC = 30A IC = 60A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 60A
IC = 15A
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
80 70 60 50 40 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 11-2008 052-6360 Rev B
APT30GT60BRDL(G)
16 td(ON), TURN-ON DELAY TIME (ns) 14 12 10 8 6 4
VCE = 400V T = 25C, or 125C L = 100H
300 td (OFF), TURN-OFF DELAY TIME (ns)
VGE = 15V
250
VGE =15V,TJ=125C VGE =15V,TJ=25C
200
150
100
2 RJ = 10 G 0 0
50 VCE = 400V RG = 10
L = 100H
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 60 50 tr, RISE TIME (ns) 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 400V
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140
TJ = 125C, VGE = 15V RG = 10, L = 100H, VCE = 400V
0
0
120 tf, FALL TIME (ns) 100 80 60 40
TJ = 25C, VGE = 15V
20 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 10
G
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2000 EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 10
G
0
2500
TJ = 125C
1500
TJ = 125C
2000
1500
1000
1000
500
TJ = 25C
500
TJ = 25C
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4500 SWITCHING ENERGY LOSSES (J) 4000 3500 3000 1500 1000 500 0 0
Eoff,60A Eon2,30A
V = 400V CE V = +15V GE T = 125C
J
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 10
G
0
Eon2,60A
Eon2,60A
2500
2000
1500
Eoff,60A Eon2,30A Eoff,30A Eoff,15A Eon2,15A
11-2008
1000
Eoff,30A Eoff,15A Eon2,15A
500 0
Rev B
052-6360
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000 Cies 1,000 C, CAPACITANCE ( F)
P
APT30GT60BRDL(G)
120 IC, COLLECTOR CURRENT (A) 100 80 60 40 20
500
Coes 100 50 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.60
ZJC, THERMAL IMPEDANCE (C/W)
0.50 D = 0.9 0.40 0.7 0.30 0.5 0.20 0.3
Note:
PDM
t1 t2
0.10 0 10-5
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
50
0.0838
0.00245
10 5
T = 125C J T = 75C C D = 50 % = 400V V CE R = 10
G
Power (watts)
0.207
0.00548
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
0.209 Case temperature. (C)
0.165
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
5
052-6360
Rev B
11-2008
APT30GT60BRDL(G)
Gate Voltage
APT30DL60
10% TJ = 125C td(on) Collector Current
V CC
IC
V CE
tr 5% 10%
90%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
td(off) tf 90%
TJ = 125C Gate Voltage
Collector Voltage
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6360
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
APT30GT60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF (AV) IF (RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT30GT60BRDL(G) UNIT
30 51 320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN TYP MAX UNIT
1.25 2.0 1.25
MIN TYP
1.6
Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.2 ZJC, THERMAL IMPEDANCE (C/W) 1 0.8 0.6
Note:
64 317 962 7 561 2244 9 264 3191 26 -
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
-
nC Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
PDM
0.4 0.2 0
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 11-2008 052-6360 Rev B
TJ (C) TC (C)
10-5
10-4
Dissipated Power (Watts)
.0005
.0016
0.263
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.112
.437
.450
TYPICAL PERFORMANCE CURVES
100 90 80 IF, FORWARD CURRENT (A) 70 60 50 40 30 20 10 0 0 800 TJ= 125C trr, COLLECTOR CURRENT (A) TJ= 150C TJ= 55C 700 600 500 400 300 200 100 0 15A 60A 30A
APT30GT60BRDL(G)
T = 125C J V = 400V
R
TJ= 25C
Qrr, REVERSE RECOVERY CHARGE (nC)
IRRM, REVERSE RECOVERY CURRENT (A)
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125C 60A J V = 400V R 4000 3500 3000 2500 2000 1500 1000 500 15A 30A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 24 20 16 12 8 4 0
T = 125C J V = 400V
R
60A 30A 15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1 0.8 0.6 0.4 0.2 0 IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 60 50 40 IF(AV) (A) 30 20 10
Duty cycle = 0.5 TJ = 126C
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
tRR QRR
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 250 200 150 100 50 0
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
052-6360
Rev B
11-2008
10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT30GT60BRDL(G)
D.U.T.
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate
Collector (Cathode) Emitter (Anode)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6360
Rev B
11-2008
2.21 (.087) 2.59 (.102)

▲Up To Search▲

Price & Availability of APT30GT60BRDL

	To Download APT30GT60BRDL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .